MMBTSC2223 Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC2223
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
SOT-23 Plastic Package
Value
Unit
30
V
20
V
4
V
20
mA
200
mW
150
O_C
-55 +150
O_C
Characteristics at T_amb=25 ^OC
Parameter
Symbol
Min.
DC Current Gain
at V_CE = 6 V, I_C = 1 mA Current Gain Group R
h_FE
40
O
h_FE
60
Y
h_FE
90
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
V_CE(sat)
-
Collector Cutoff Current
at V_CB = 30 V
Emitter Cutoff Current
at V_EB = 4 V
I_CBO
-
I_EBO
-
Collector Base Breakdown Voltage
at I_C = 10 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Gain Bandwidth Product
at V_CE = 6 V, -I_E =1 mA
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
f_T
30
20
4
400
Output Capacitance
at V_CB = 6 V, I_E = 0, f = 1 MHz
C_OB
-
Collector to Base Time Constant
at V_CE = 6 V, -I_E = 1 mA, f = 31.9 MHz
C_C-rb'b
-
Noise Figure
at V_CE = 6 V, -I_E = 1 mA, f = 100 MHz, R_G = 50 Ω
NF
-
Typ.
Max. Unit
-
80
-
-
120
-
-
180
-
-
0.3
V
-
0.1
µA
-
0.1
µA
V
-
-
V
-
-
V
600
-
MHz
1
-
pF
12
-
ps
3
-
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/12/2005