MMBTSC1815 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC1815
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups O, Y,
G and L, according to its DC current gain. As
complementary type the PNP transistor
MMBTSA1015 is recommended.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
60
V
V_CEO
50
V
V_EBO
5
V
I_C
150
mA
I_B
50
mA
P_tot
200
mW
T_j
150
O_C
T_S
-55 to +150
O_C
Characteristics at T_amb=25 ^OC
Parameter
DC Current Gain
at V_CE=6V, I_C=2mA
Current Gain Group O
Y
G
L
at V_CE=6V, I_C=150mA
Collector Saturation Voltage
at I_C=100mA, I_B=10mA
Base Saturation Voltage
at I_C=100mA, I_B=10mA
Collector Cutoff Current
at V_CB=60V
at V_EB=5V
Gain Bandwidth Product
at V_CE=10V, I_C=1mA
Output Capacitance
at V_CB=10V, f=1MHz
Noise Figure
at V_CE=6V, I_C=0.1mA, f=1KHz, R_G=10KΩat
Symbol Min.
h_FE
h_FE
h_FE
h_FE
h_FE
V_CE(sat)
V_BE(sat)
I_CBO
I_EBO
f_T
C_OB
NF
70
120
200
350
25
-
-
-
-
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
2
1
Max.
Unit
140
-
240
-
400
-
700
-
-
-
0.25
V
1
V
0.1
µA
0.1
µA
-
MHz
3
pF
1
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/12/2005