MMBTSC1623 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC1623
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
The transistor is subdivided into four groups,
O, Y, G and L, according to its DC current gain
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 6 V, I_C = 1 mA Current Gain Group
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Collector Cutoff Current
at V_CB = 60 V
Emitter Cutoff Current
at V_EB = 5 V
Collector Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
Base Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
Gain Bandwidth Product
at V_CE = 6 V, I_C = 10 mA
Output Capacitance
at V_CB = 6 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
60
50
5
100
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Symbol Min.
O
h_FE
90
Y
h_FE
135
G
h_FE
200
L
h_FE
300
V_(BR)CBO
60
V_(BR)CEO
50
V_(BR)EBO
5
I_CBO
-
I_EBO
-
V_CE(sat)
-
V_BE(sat)
-
f_T
-
C_OB
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
250
3
Max.
180
270
400
600
-
-
-
0.1
0.1
0.3
1
-
-
Unit
-
-
-
-
V
V
V
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/09/2006