MMBTSC1009 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Transistor

MMBTSC1009
NPN Silicon Epitaxial Transistor
FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER.
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
50
V
V_CEO
30
V
V_EBO
5
V
I_C
50
mA
P_tot
200
mW
T_j
125
O_C
T_S
-55 to +125
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 6 V, I_C = 1 mA
Current Gain Group
O
Y
Collector Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
Base Emitter Voltage
at V_CE = 6 V, I_C = 1 mA
Emitter Cutoff Current
at V_EB = 5 V
Collector Cutoff Current
at V_CB = 50 V
Gain Bandwidth Product
at V_CE = 6 V, -I_E = 1 mA
Output Capacitance
at V_CB = 6 V, f = 1 MHz
Collector Base Time Constant
at V_CB = 6 V, f = 31.9 MHz, -I_E = 10 mA
Noise Figure
at V_CE = 6 V, -I_E = 1 mA. f = 1 MHz, R_G = 500 Ω
Symbol
h_FE
h_FE
V_CE(sat)
V_BE
I_EBO
I_CBO
f_T
C_ob
C_c.rb’b
NF
Min.
60
90
-
0.65
-
-
150
-
-
-
Typ.
-
-
-
-
-
-
250
1.9
10
2
Max.
120
180
0.3
0.75
0.1
0.1
-
2.2
15
4
Unit
-
-
V
V
µA
µA
MHz
pF
ns
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005