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MMBTSB815 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
MMBTSB815
PNP Silicon Epitaxial Planar Transistor
for general purpose AF amplifier
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 50 mA
at -VCE = 2 V, -IC = 500 mA
Collector Cutoff Current
at -VCB = 15 V
Emitter Cutoff Current
at -VEB = 4 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 5 mA, -IB = 0.5 mA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Transition Frequency
at -VCE = 10 V, -IC = 50 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
-VCBO
20
V
-VCEO
15
V
-VEBO
5
V
-IC
700
mA
-ICP
1.5
A
Ptot
200
mW
Tj
150
OC
TS
- 55 to + 150
OC
Symbol Min.
hFE
200
hFE
80
-ICBO
-
-IEBO
-
-V(BR)CBO
20
-V(BR)CEO
15
-V(BR)EBO
5
-VCE(sat)
-
-VCE(sat)
-
fT
-
Cob
-
Typ.
-
-
-
-
-
-
-
-
-
250
13
Max.
400
-
100
100
-
-
-
35
120
-
-
Unit
-
-
nA
nA
V
V
V
mV
mV
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/07/2007