MMBTSB624 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSB624
PNP Silicon Epitaxial Planar Transistor
For use in small type equipments, especially
recommended or hybrid circuit and other applications
The transistor is subdivided into five groups A, B, C, D
and E, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
30
25
5
700
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 1 V, -I_C = 100 mA
at -V_CE = 1 V, -I_C = 700 mA
Collector Base Cutoff Current
at -V_CB = 30 V
Emitter Base Cutoff Current
at -V_EB = 5 V
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 100 µA
Collector Emitter Saturation Voltage
at -I_C = 700 mA, -I_B = 70 mA
Base Emitter On Voltage
at -V_CE = 6 V , -I_C = 10 mA
Output Capacitance
at -V_CB = 6 V, I_E = 0, f = 1 MHz
Transition Frequency
at -V_CE = 6 V, -I_C = 10 mA
Symbol Min.
A
h_FE
110
B
h_FE
135
C
h_FE
170
D
h_FE
200
E
h_FE
250
h_FE
50
-I_CBO
-
-I_EBO
-
-V_(BR)CBO
30
-V_(BR)CEO
25
-V_(BR)EBO
5
-V_CE(sat)
-
-V_BE(on)
0.6
C_ob
-
f_T
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
17
160
Max.
180
220
270
320
400
-
100
100
-
-
-
0.6
0.7
-
-
Unit
-
-
-
-
-
-
nA
nA
V
V
V
V
V
pF
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/11/2007