MMBTSB1690 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistors

MMBTSB1690
PNP Silicon Epitaxial Planar Transistors
for low frequency amplifier and driver applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1) _{Single pulse, Pw = 1 ms.}
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 2 V, -I_C = 200 mA
Collector Base Breakdown Voltage
at -I_C = 10 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E= 10 µA
Collector Emitter Saturation Voltage
at -I_C = 1 A, -I_B = 50 mA
Collector Cutoff Current
at -V_CB = 15 V
Emitter Cutoff Current
at -V_EB = 6 V
Transition Frequency
at -V_CE = 2 V, I_E = 200 mA, f = 100 MHz
Collector Output Capacitance
at -V_CB = 10 V, I_E = 0 mA, f = 1 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
-V_CBO
15
V
-V_CEO
12
V
-V_EBO
6
V
-I_C
2
A
-I_CP
4 ¹⁾
A
P_tot
200
mW
T_J
150
O_C
T_s
-55 to +150
O_C
Symbol Min.
h_FE
270
-V_(BR)CBO
15
-V_(BR)CEO
12
-V_(BR)EBO
6
-V_CEsat
-
-I_CBO
-
-I_EBO
-
f_T
-
C_ob
-
Typ.
-
-
-
-
-
-
-
360
15
Max. Unit
680
-
-
V
-
V
-
V
0.18
V
100
nA
100
nA
-
MHz
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006