MMBTSB1198 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSB1198
PNP Silicon Epitaxial Planar Transistor
Low frequency transistor
The transistor is subdivided into two groups Q and
R, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 3 V, -I_C = 100 mA
Collector Cutoff Current
at -V_CB = 50 V
Emitter Cutoff Current
at -V_EB = 4 V
Collector-Base Breakdown Voltage
at -I_C = 50 µA
Emitter-Base Breakdown Voltage
at -I_E = 50 µA
Collector-Emitter Breakdown Voltage
at -I_C = 2 mA
Collector-Emitter Saturation Voltage
at -I_C = 500 mA, -I_B = 50 mA
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Transition Frequency
at -V_CE = 10 V, I_E = 50 mA, f = 100 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
-V_CBO
80
V
-V_CEO
80
V
-V_EBO
5
V
-I_C
0.5
A
P_tot
200
mW
T_j
150
O_C
T_S
-55 to +150
O_C
Symbol Min.
Q
h_FE
R
h_FE
-I_CBO
-I_EBO
-V_CBO
-V_EBO
-V_CEO
-V_CE(sat)
C_ob
f_T
120
180
-
-
80
5
80
-
-
-
Typ.
-
-
-
-
-
-
-
-
11
180
Max. Unit
270
-
390
-
0.5
µA
0.5
µA
-
V
-
V
-
V
0.5
V
-
pF
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005