MMBTSB1197 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSB1197
PNP Silicon Epitaxial Planar Transistor
Low frequency transistor
The transistor is subdivided into two groups Q and
R according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a =25 ^OC
Parameter
DC Current Gain
at -V_CE = 3 V, -I_C = 100 mA
Collector Cutoff Current
at -V_CB = 20 V
Emitter Cutoff Current
at -V_EB = 4 V
Collector Base Breakdown Voltage
at -I_C = 50 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 50 µA
Collector Saturation Voltage
at -I_C = 500 mA, -I_B = 50 mA
Output Capacitance
at -V_CB = 10 V, I_E = 0 A, f = 1 MHz
Transition Frequency
at -V_CE = 5 V, I_E = 50 mA, f = 100 MHz
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
SOT-23 Plastic Package
Value
Unit
40
V
32
V
5
V
800
mA
200
mW
150
O_C
-55 to +150
O_C
Symbol
Q
h_FE
R
h_FE
-I_CBO
-I_EBO
-V_(BR)CBO
-V_(BR)CEO
-V_(BR)EBO
-V_CE(sat)
C_ob
f_T
Min.
120
180
-
-
40
32
5
-
-
50
Max.
270
390
0.5
0.5
-
-
-
0.5
30
-
Unit
-
-
µA
µA
V
V
V
V
pF
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005