MMBTSA1980W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSA1980W
PNP Silicon Epitaxial Planar Transistor
for general small signal amplifier applications.
The transistor is subdivided into four groups, O, Y,
G and L, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 6 V, -I_C = 2 mA
Current Gain Group
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 10 µA
Collector Cutoff Current
at -V_CB = 50 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Emitter Saturation Voltage
at -I_C = 100 mA, -I_B = 10 mA
Transition Frequency
at -V_CE = 10 V, -I_C = 1 mA
Collector Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Noise Figure
at -V_CE = 6 V, -I_C = 0.1 mA,tf = 1 KHz, R_G = 10 KΩ
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
Symbol
O
h_FE
Y
h_FE
G
h_FE
L
h_FE
-V_(BR)CBO
-V_(BR)CEO
-V_(BR)EBO
-I_CBO
-I_EBO
-V_CE(sat)
f_T
C_OB
NF
Value
50
50
5
150
200
150
-55 +150
Min.
Max.
70
140
120
240
200
400
300
700
50
-
50
-
5
-
-
0.1
-
0.1
-
0.3
80
-
-
7
-
10
Unit
V
V
V
mA
mW
O_C
O_C
Unit
-
-
-
-
V
V
V
µA
µA
V
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/03/2006