MMBTSA1979 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSA1979
PNP Silicon Epitaxial Planar Transistor
For medium power amplifier applications
The transistor is subdivided into two groups,
O and Y according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
SOT-23 Plastic Package
Value
Unit
40
V
32
V
5
V
500
mA
200
mW
150
O_C
- 55 to + 150
O_C
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 1 V, -I_C = 100 mA
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 10 µA
Collector Cutoff Current
at -V_CB = 40 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Saturation Voltage
at -I_C = 100 mA, -I_B = 10 mA
Transition Frequency
at -V_CE = 6 V, -I_C = 20 mA
Collector Output Capacitance
at -V_CB = 6 V, f = 1 MHz
Symbol
O
h_FE
Y
h_FE
-V_(BR)CBO
-V_(BR)CEO
-V_(BR)EBO
-I_CBO
-I_EBO
-V_CE(sat)
f_T
C_ob
Min.
70
120
40
32
5
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
200
7.5
Max.
140
240
-
-
-
0.1
0.1
0.25
-
-
Unit
-
-
V
V
V
µA
µA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/08/2006