MMBTSA1365 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSA1365
PNP Silicon Epitaxial Planar Transistor
for high current drive application
The transistor is subdivided into three groups E, F
and G according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 4 V, -I_C = 100 mA
Collector Cutoff Current
at -V_CB = 25 V
Emitter Cutoff Current
at -V_EB = 2 V
Collector Base Breakdown Voltage
at -I_C = 10 µA
Collector Emitter Breakdown Voltage
at -I_C = 100 µA
Emitter Base Breakdown Voltage
at -I_E = 10 µA
Collector Saturation Voltage
at -I_C = 500 mA, -I_B = 25 mA
Transition Frequency
at -V_CE = 6 V, I_E = 10 mA
SOT-23 Plastic Package
Symbol
Value
Unit
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_CM
P_tot
T_j
T_S
25
20
4
700
1
200
150
- 55 to + 150
V
V
V
mA
A
mW
O_C
O_C
Symbol Min. Typ. Max. Unit
E
h_FE
150
-
300
-
F
h_FE
250
-
500
-
G
h_FE
400
-
800
-
-I_CBO
-
-
1
µA
-I_EBO
-
-
1
µA
-V_(BR)CBO
25
-
-
V
-V_(BR)CEO
20
-
-
V
-V_(BR)EBO
4
-
-
V
-V_CE(sat)
-
-
0.5
V
f_T
-
180
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/12/2006