MMBTSA1298W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSA1298W
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplifier and power switching
applications
The transistor is subdivided into two groups, O
and Y according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
-V_CBO
35
V
-V_CEO
30
V
-V_EBO
5
V
-I_C
800
mA
-I_B
160
mA
P_tot
200
mW
T_j
150
O_C
T_S
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at -V_CE = 1 V, -I_C = 100 mA
Current Gain Group O hFE
100
Y
h_FE
160
at -V_CE = 1 V, -I_C = 800 mA
h_FE
40
Collector Cutoff Current
at -V_CB = 30 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
Emitter Base Breakdown Voltage
at -I_E = 1 mA
Collector Saturation Voltage
at -I_C = 500 mA, -I_B = 20 mA
Base Emitter Voltage
at -V_CE = 1 V, -I_C = 10 mA
Transition Frequency
at -V_CE = 5 V, -I_C = 10 mA
Collector Output Capacitance
at -V_CB = 10 V, f = 1 MHz
-I_CBO
-
-I_EBO
-
-V_(BR)CEO
30
-V_(BR)EBO
5
-V_CE(sat)
-
-V_BE
0.5
f_T
-
C_ob
-
Typ.
-
-
-
-
-
-
-
-
-
120
13
Max.
200
320
-
100
100
-
-
0.4
0.8
-
-
Unit
-
-
-
nA
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/06/2007