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MMBTSA1298 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
MMBTSA1298
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplifier and power switching
applications
The transistor is subdivided into two groups, O
and Y according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IB
Ptot
Tj
TS
SOT-23 Plastic Package
Value
Unit
30
V
25
V
5
V
800
mA
160
mA
200
mW
150
OC
-55 to +150
OC
Characteristics at Tamb=25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 800 mA
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Saturation Voltage
at -IC = 500 mA, -IB = 20 mA
Base Emitter Voltage
at -VCE = 1 V, -IC = 10 mA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 0.1 mA
Transition Frequency
at -VCE = 5 V, -IC = 10 mA
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
O
hFE
Y
hFE
hFE
-ICBO
-IEBO
-VCE(sat)
-VBE
-V(BR)CEO
-V(BR)EBO
fT
Cob
Min.
100
160
40
-
-
-
0.5
25
5
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
13
Max.
200
320
-
0.1
0.1
0.4
0.8
-
-
-
-
Unit
-
-
-
µA
µA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/04/2006