MMBTSA1256 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSA1256
PNP Silicon Epitaxial Planar Transistor
for use in FM RF amplifier, mixer, oscillators,
converters and IF amplifiers applications
The transistor is subdivided into three groups, R,
Q and Y according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
-V_CBO
30
V
-V_CEO
20
V
-V_EBO
5
V
-I_C
30
mA
P_tot
200
mW
T_j
125
O_C
T_S
- 55 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at -V_CE = 6 V, -I_C = 1 mA Current Gain Group R
h_FE
60
Q
h_FE
90
Y
h_FE
135
Collector Cutoff Current
at -V_CB = 10 V
Emitter Cutoff Current
at -V_EB = 4 V
-I_CBO
-
-I_EBO
-
Transition Frequency
at -V_CE = 6 V, -I_C = 1 mA
Reverse Transfer Capacitance
at -V_CB = 6 V, f = 1 MHz
Noise Figure
at -V_CE = 6 V, -I_C = 1 mA, f = 100 MHz
f_T
150
C_re
-
NF
-
Typ.
-
-
-
-
-
230
-
2.5
Max.
120
180
270
0.1
0.1
-
1.7
-
Unit
-
-
-
µA
µA
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 03/08/2006