MMBTSA1235 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBTSA1235
PNP Silicon Epitaxial Planar Transistor
for low frequency amplification applications
The transistor is subdivided into two groups E and F,
according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
-V_CBO
60
V
-V_CEO
50
V
-V_EBO
6
V
-I_C
200
mA
P_tot
200
mW
T_j
150
O_C
T_S
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at -V_CE = 6 V, -I_C = 1 mA
at -V_CE = 6 V, -I_C = 0.1 mA
Current Gain Group E h_FE
150
F
h_FE
250
h_FE
90
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 100 µA
Emitter Base Breakdown Voltage
at -I_C = 100 µA
Collector Cutoff Current
at -V_CB = 60 V
Emitter Cutoff Current
at -V_EB = 6 V
Collector Emitter Saturation Voltage
at -I_C = 100 mA, -I_B = 10 mA
Base Emitter Saturation Voltage
at -I_C = 100 mA, -I_B = 10 mA
Gain Bandwidth Product
at -V_CE = 6 V, -I_C = 10 mA
Collector Output Capacitance
at -V_CB = 6 V, f = 1 MHz
Noise Figure
at -V_CE = 6 V, I_E= 0.3 mA, f = 100 Hz, R_G = 10 KΩ
-V_(BR)CBO 60
-V_(BR)CEO 50
-V_(BR)EBO
6
-I_CBO
-
-I_EBO
-
-V_CE(sat)
-
-V_BE(sat)
-
f_T
-
C_ob
-
NF
-
Typ.
-
-
-
-
-
-
-
-
-
-
200
4
-
Max. Unit
300
-
500
-
-
-
-
V
-
V
-
V
0.1
µA
0.1
µA
0.3
V
1
V
-
MHz
-
pF
20
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/08/2006