MMBTSA1162 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - DC
Collector Current - Pulse ¹⁾
Base Current - DC
Total Power Dissipation @ T_C = 25 ^OC
Total Power Dissipation @ T_A = 25 ^OC
Operating and Storage Junction Temperature Range
1) _{PW=10ms, Duty Cycle ≤ 50%}
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_C
-I_B
P_D
P_D
T_J, T_s
E
C
B
TO-126 Plastic Package
Value
Unit
40
V
30
V
5
V
3
A
7
A
0.6
A
10
W
1.0
W
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 2 V, -I_C = 20 mA
at -V_CE = 2 V, -I_C = 1 A
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Collector Base Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 1 mA
Collector Cutoff Current
at -V_CB = 30 V
Emitter Cutoff Current
at -V_EB = 3 V
Collector Emitter Saturation Voltage
at -I_C = 2 A, -I_B = 200 mA
Base Emitter Saturation Voltage
at -I_C = 2 A, -I_B = 200 mA
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Current Gain Bandwidth Product
at -I_C = 100 mA, -V_CE = 5 V
Symbol
h_FE
R
h_FE
Q
h_FE
P
h_FE
E
h_FE
-V_(BR)CEO
-V_(BR)CBO
-V_(BR)EBO
-I_CBO
-I_EBO
-V_CE(sat)
-V_BE(sat)
C_O
f_T
Min.
30
60
100
160
200
30
40
5
-
-
-
-
-
-
Typ. Max. Unit
-
-
-
-
120
-
-
200
-
-
320
-
-
400
-
-
-
V
-
-
V
-
-
V
-
1
µA
-
1
µA
-
0.5
V
-
2
V
55
-
pF
80
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/05/2006