MMBTRC231S Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTRC231S...MMBTRC234S
NPN Silicon Epitaxial Planar Transistor
For switching, audio muting, interface circuit and
driver circuit applications
R1
Base
Collector
Emitter
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
30
15
5
600
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at V_CE = 5 V, I_C = 50 mA
h_FE
200
-
800
-
Collector Base Breakdown Voltage
at I_C = 50 µA
V_(BR)CBO
30
-
-
V
Collector Emitter Breakdown Voltage
at I_C = 1 mA
V_(BR)CEO
15
-
-
V
Emitter Base Breakdown Voltage
at I_E = 50 µA
V_(BR)EBO
5
-
-
V
Collector Base Cutoff Current
at V_CB = 30 V
I_CBO
-
-
0.5
µA
Collector Emitter Saturation Voltage
at I_C = 50 mA, I_B = 2.5 mA
V_CE(sat)
-
-
80
mV
Transition Frequency
at V_CE = 10 V, -I_E = 50 mA, f = 100 MHz
f_T
-
200
-
MHz
MMBTRC231S
2.2
Input Resistor
MMBTRC233S R1
-
10
-
KΩ
MMBTRC234S
4.7
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/07/2008