MMBTRC110SS Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTRC110SS…MMBTRC114SS
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
R1
Base
Collector
Emitter
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
50
50
5
100
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 5 V, I_C = 1 mA
Collector Cutoff Current
at V_CB = 50 V
Emitter Cutoff Current
at V_EB = 5 V
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 0.5 mA
Transition Frequency
at V_CE = 10 V, I_C = 5 mA
Symbol Min.
h_FE
120
I_CBO
-
I_EBO
-
V_CE(sat)
-
f_T
-
Typ.
-
-
-
-
250
Max.
-
100
100
0.3
-
Unit
-
nA
nA
V
MHz
Input Resistor
MMBTRC110SS
-
4.7
-
MMBTRC111SS
-
10
-
MMBTRC112SS
R₁
-
100
-
KΩ
MMBTRC113SS
-
22
-
MMBTRC114SS
-
47
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/12/2006