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MMBTRA110SS Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
MMBTRA110SS…MMBTRA114SS
PNP Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
R1
Base
Collector
Emitter
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
50
50
5
100
200
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
Collector Cutoff Current
at -VCB = 50 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
Transition Frequency
at -VCE = 10 V, -IC = 5 mA
Symbol Min.
hFE
120
-ICBO
-
-IEBO
-
-VCE(sat)
-
fT
-
Typ.
-
-
-
-
250
Max.
-
100
100
0.3
-
Unit
-
nA
nA
V
MHz
Input Resistor
MMBTRA110SS
-
4.7
-
MMBTRA111SS
-
10
-
MMBTRA112SS
R1
-
100
-
KΩ
MMBTRA113SS
-
22
-
MMBTRA114SS
-
47
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/12/2006