MMBTH10 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - DC
Collector Current - Pulse ¹⁾
Base Current - DC
Total Power Dissipation @ T_C = 25 ^OC
Total Power Dissipation @ T_A = 25 ^OC
Operating and Storage Junction Temperature Range
1) _{PW=10ms, Duty Cycle ≤ 50%}
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_C
-I_B
P_D
P_D
T_J, T_s
E
C
B
TO-126 Plastic Package
Value
Unit
40
V
30
V
5
V
3
A
7
A
0.6
A
10
W
1.0
W
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 2 V, -I_C = 20 mA
at -V_CE = 2 V, -I_C = 1 A
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Collector Base Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 1 mA
Collector Cutoff Current
at -V_CB = 30 V
Emitter Cutoff Current
at -V_EB = 3 V
Collector Emitter Saturation Voltage
at -I_C = 2 A, -I_B = 200 mA
Base Emitter Saturation Voltage
at -I_C = 2 A, -I_B = 200 mA
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Current Gain Bandwidth Product
at -I_C = 100 mA, -V_CE = 5 V
Symbol
h_FE
R
h_FE
Q
h_FE
P
h_FE
E
h_FE
-V_(BR)CEO
-V_(BR)CBO
-V_(BR)EBO
-I_CBO
-I_EBO
-V_CE(sat)
-V_BE(sat)
C_O
f_T
Min.
30
60
100
160
200
30
40
5
-
-
-
-
-
-
Typ. Max. Unit
-
-
-
-
120
-
-
200
-
-
320
-
-
400
-
-
-
V
-
-
V
-
-
V
-
1
µA
-
1
µA
-
0.5
V
-
2
V
55
-
pF
80
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/05/2006