MMBTA92 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor

MMBTA92 / MMBTA93
PNP Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
As complementary types the NPN transistors
MMBTA42 and MMBTA43 are recommended.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
MMBTA92
MMBTA93
MMBTA92
MMBTA93
Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
SOT-23 Plastic Package
Value
Unit
300
V
200
300
V
200
5
V
500
mA
200
mW
150
O_C
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 10 V, -I_C = 1 mA
at -V_CE = 10 V, -I_C = 10 mA
at -V_CE = 10 V, -I_C = 30 mA
Collector Cutoff Current
at -V_CB = 200 V
at -V_CB = 160 V
Emitter Cutoff Current
at -V_EB = 3 V
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 100 µA
Collector Emitter Saturation Voltage
at -I_C = 20 mA, -I_B = 2 mA
Base Emitter Saturation Voltage
at -I_C = 20 mA, -I_B = 2 mA
Current Gain Bandwidth Product
at -V_CE = 20 V, -I_C = 10 mA, f = 100 MHz
Collector Base Capacitance
at -V_CB = 20 V, f = 1 MHz
Symbol
MMBTA92
MMBTA93
h_FE
h_FE
h_FE
-I_CBO
-I_CBO
-I_EBO
MMBTA92 -V_(BR)CBO
MMBTA93 -V_(BR)CBO
MMBTA92
MMBTA93
-V_(BR)CEO
-V_(BR)CEO
-V_(BR)EBO
-V_CE(sat)
-V_BE(sat)
f_T
MMBTA92
C_cb
MMBTA93
C_cb
Min.
25
40
25
-
-
-
300
200
300
200
5
-
-
50
-
-
Max.
-
-
-
0.25
0.25
0.1
-
-
-
-
-
0.5
0.9
-
6
8
Unit
-
-
-
µA
µA
µA
V
V
V
V
V
V
V
MHz
pF
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :13/03/2007