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| MMBTA63W Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Darlington Transistors | |||
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MMBTA63W, MMBTA64W
PNP Darlington Transistors
for preamplifier input applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
30
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
Collector Current 1)
Total Power Dissipation 1)
Thermal Resistance, Junction to Ambient 1)
-VEBO
10
V
-IC
500
mA
Ptot
200
mW
RθJA
625
â/W
Operating and Storage Temperature Range
Tj, Tstg
- 55 to + 150
OC
1) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001.
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 100 mA
at -VCE = 5 V, -IC = 100 mA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 10 V
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 100 µA
Base Emitter Saturation Voltage
at -IC = 100 mA, -VCE = 5 V
Transition Frequency
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
Symbol
MMBTA63W
MMBTA64W
MMBTA63W
MMBTA64W
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CEO
-VCE(sat)
-VBE(sat)
fT
Min.
5000
10000
10000
20000
-
-
30
-
-
125
Max.
-
-
-
-
100
100
-
1.5
2
-
Unit
-
-
-
-
nA
nA
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
®
Datedï¼12/09/2016 Revï¼01
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