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MMBTA63 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA63 / MMBTA64
PNP Silicon Epitaxial Planar Transistor
for general purpose application, darlington transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
-VCBO
30
V
-VCEO
30
V
-VEBO
10
V
-IC
500
mA
Ptot
200
mW
Tj
150
OC
TS
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 100 mA
at -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 10 V
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 100 mA
Transition Frequency
at -VCE = 5 V, IE = 10 mA
Symbol
MMBTA63
MMBTA64
MMBTA63
MMBTA64
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CEO
-VCE(sat)
-VBE(on)
fT
Min.
5000
10000
10000
20000
-
-
30
-
-
125
Max.
-
-
-
-
100
100
-
1.5
2
-
Unit
-
-
-
-
nA
nA
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2006
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