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MMBTA10 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor
MMBTA10 / MMBTA11
NPN Silicon Epitaxial Planar Transistor
VHF / UHF transistor
Absolute Maximum Ratings (Ta = 25 oC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 4 mA
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Cutoff Current
at VCB = 25 V
Emitter Cutoff Current
at VEB = 2 V
Collector Emitter Saturation Voltage
at IC = 4 mA, IB = 0.4 mA
Base-Emitter On Voltage
at VCE = 10 V, IC = 4 mA
Current Gain Bandwidth Product
at VCE = 10 V, IC = 4 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Collector Base Feedback Capacitance
VCB = 10 V, f = 1 MHz
MMBTA10
MMBTA11
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Ts
SOT-23 Plastic Package
Rating
Unit
30
V
25
V
3
V
100
mA
200
mW
150
OC
- 55 to + 150
OC
Symbol
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(on)
fT
Ccb
Crb
Min
60
30
25
3
-
-
-
-
650
-
0.35
0.6
Max
Unit
-
-
-
V
-
V
-
V
100
nA
100
nA
0.5
V
0.95
V
-
MHz
0.7
pF
0.65
pF
0.9
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/06/2006