MMBT9018G Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBT9018G / MMBT9018H
NPN Silicon Epitaxial Planar Transistor
for AM/FM amplifier and local oscillator of
FM/VHF tuner applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
30
15
5
50
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Electrical Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 5 V, I_C = 1 mA
MMBT9018G
MMBT9018H
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 100 µA
Collector Cutoff Current
at V_CB = 12 V
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
Gain Bandwidth Product
at V_CE = 5 V, I_C = 5 mA
Collector Base Capacitance
at V_CB = 10 V, f = 1 MHz
Symbol Min.
h_FE
h_FE
V_(BR)CBO
75
105
30
V_(BR)CEO
15
V_(BR)EBO
5
I_CBO
-
V_CE(sat)
-
f_T
700
C_CBO
-
Typ.
-
-
-
-
-
-
-
1100
1.3
Max.
105
190
-
-
-
50
0.5
-
1.7
Unit
-
-
V
V
V
nA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/02/2006