MMBT9014 Datasheet, PDF (1/2 Pages) Unisonic Technologies – PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR

MMBT9014
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
As complementary types the PNP
transistor MMBT9015 is recommended.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
SOT-23 Plastic Package
Value
Unit
50
V
45
V
5
V
100
mA
200
mW
150
O_C
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
DC Current Gain
at V_CE = 5 V, I_C = 1 mA
MMBT9014B
h_FE
110
MMBT9014C
h_FE
200
MMBT9014D
h_FE
420
Collector Cutoff Current
at V_CB = 50 V
Emitter Cutoff Current
at V_EB = 5 V
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 100 µA
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 5 mA
Base Emitter Saturation Voltage
at I_C = 100 mA, I_B = 5 mA
Gain Bandwidth Product
at V_CE = 5 V, I_C = 10 mA
Output Capacitance
at V_CB = 10 V, f = 1 MHz
Noise Figure
at V_CE = 5 V, I_C = 200 µA, f = 1 KHz, R_G = 2 KΩ
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_CE(sat)
V_BE(sat)
f_T
C_OB
NF
-
-
50
45
5
-
-
100
-
-
Max.
220
450
800
50
50
-
-
-
0.6
1
-
6
10
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/08/2007