MMBT8550W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBT8550W (1.5A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
-V_CBO
40
V
-V_CEO
25
V
-V_EBO
5
V
-I_CM
1.5
A
P_tot
200
mW
T_j
150
O_C
T_S
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
DC Current Gain
at -V_CE = 1 V, -I_C = 100 mA
MMBT8550CW
h_FE
100
MMBT8550DW
h_FE
160
at -V_CE = 1 V, -I_C = 800 mA
h_FE
40
Collector Base Voltage
at -I_C = 100 µA
-V_CBO
40
Collector Emitter Voltage
at -I_C = 100 µA
-V_CEO
25
Emitter Base Voltage
at -I_E = 100 µA
-V_EBO
5
Collector Base Cutoff Current
at -V_CB = 40 V
-I_CBO
-
Collector Emitter Cutoff Current
at -V_CE = 20 V
-I_CEO
-
Emitter Base Cutoff Current
at -V_EB = 5 V
-I_EBO
-
Collector Emitter Saturation Voltage
at -I_C = 800 mA, -I_B = 80 mA
-V_CE(sat)
-
Base Emitter Saturation Voltage
at -I_C = 800 mA, -I_B = 80 mA
-V_BE(sat)
-
Transition Frequency
at -V_CE = 10 V, -I_C = 50 mA, f = 30 MHz
f_T
100
Max.
250
400
-
-
-
-
100
100
100
0.5
1.2
-
Unit
-
-
-
V
V
V
nA
nA
nA
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/08/2006