MMBT8550 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MMBT8550
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary type the NPN transistor
MMBT8050 is recommended.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
40
25
6
600
350
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 1 V, -I_C = 100 mA
at -V_CE = 1 V, -I_C = 500 mA
Collector Base Cutoff Current
at -V_CB = 35 V
Collector Base Breakdown Voltage
at -I_C = 10 µA
Collector Emitter Breakdown Voltage
at -I_C = 2 mA
Emitter Base Breakdown Voltage
at -I_E = 100 µA
Collector Emitter Saturation Voltage
at -I_C = 500 mA, -I_B = 50 mA
Base Emitter Saturation Voltage
at -I_C = 500 mA, -I_B = 50 mA
Gain Bandwidth Product
at -V_CE = 5 V, -I_C = 10 mA
Symbol Min.
MMBT8550C h_FE
100
MMBT8550D h_FE
160
h_FE
40
-I_CBO
-
-V_(BR)CBO
40
-V_(BR)CEO
25
-V_(BR)EBO
6
-V_CE(sat)
-
-V_BE(sat)
-
f_T
-
Typ.
-
-
-
-
-
-
-
-
-
100
Max.
250
400
-
100
-
-
-
0.5
1.2
-
Unit
-
-
-
nA
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/04/2008