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| MMBT8050W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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MMBT8050W
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VCEO
25
V
VCBO
40
VEBO
6
IC
600
Ptot
200
V
V
mA
mW
Tj
150
OC
TS
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 500 mA
Collector Cutoff Current
at VCB = 35 V
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Saturation Voltage
at IC = 500 mA, IB = 50 mA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Collector Base Breakdown Voltage
at IC = 10 µA
Emitter Base Breakdown Voltage
at IE = 100 µA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
MMBT8050CW
MMBT8050DW
Symbol
hFE
hFE
hFE
ICBO
VCE(sat)
VBE(sat)
V(BR)CEO
V(BR)CBO
V(BR)EBO
fT
CCBO
Min.
100
160
40
-
-
-
25
40
6
-
-
Typ. Max. Unit
-
250
-
-
400
-
-
-
-
-
100
nA
-
0.5
V
-
1.2
V
-
-
V
-
-
V
-
-
V
100
-
MHz
12
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/08/2006
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