MMBT7002KDW-AH Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – N-Channel Enhancement Mode Field Effect Transistor

MMBT7002KDW-AH
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low on resistance R_DS(ON)
• Low gate threshold voltage
• Low input capacitance
• ESD protected up to 2KV
• AEC-Q101 Qualified and PPAP Capable
• Halogen and Antimony Free(HAF), RoHS compliant
6
5
4
TR1
TR2
1
2
3
1.Source 2. Gate 3. Drain
4. Source 5.Gate 6. Drain
SOT-363 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulse Width ≤ 10 µs)
V_DSS
V_GSS
I_D
I_DM
Total Power Dissipation
P_tot
Junction and Storage Temperature Range
T_j, T_stg
1) _{Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.}
2) _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm}2_.
Characteristics at T_a = 25 ^OC
Parameter
Drain Source Breakdown Voltage
at I_D = 10 µA
Zero Gate Voltage Drain Current
at V_DS = 60 V
Gate Source Leakage Current
at V_GS = ± 20 V
Gate Threshold Voltage
at V_DS = 10 V, I_D = 250 µA
Static Drain Source On-Resistance
at V_GS = 10 V, I_D = 500 mA
at V_GS = 5 V, I_D = 50 mA
Forward Transconductance
at V_DS = 10 V, I_D = 200 mA
Input Capacitance
at V_DS = 25 V, f = 1 MHz
Output Capacitance
at V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at V_DS = 25 V, f = 1 MHz
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_DS(ON)
g_fs
C_iss
C_oss
C_rss
Value
60
± 20
300
1.2
295 ¹⁾
350 ²⁾
- 55 to + 150
Min.
Max.
60
-
-
1
-
± 10
1.1
2.1
-
3
-
4
80
-
-
50
-
25
-
5
Unit
V
V
mA
A
mW
O_C
Unit
V
µA
µA
V
Ω
mS
pF
pF
pF
SEMTECH ELECTRONICS LTD.
®
Dated: 13/09/2016 Rev:01