MMBT7002K Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – N-Channel Enhancement Mode Field Effect Transistor

MMBT7002K
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low on resistance R_DS(ON)
• Low gate threshold voltage
• Low input capacitance
• ESD protected up to 2KV
Drain
Gate
Source
1.Gate 2.Source 3.Drain
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulse Width ≤ 10 µs)
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Drain Source Breakdown Voltage
at I_D = 10 µA
Zero Gate Voltage Drain Current
at V_DS = 60 V
Gate-Source Leakage Current
at V_GS = ± 20 V
Gate Threshold Voltage
at V_DS = 10 V, I_D = 250 µA
Static Drain-Source On-Resistance
at V_GS = 10 V, I_D = 500 mA
at V_GS = 5 V, I_D = 50 mA
Forward Transconductance
at V_DS = 10 V, I_D = 200 mA
Input Capacitance
at V_DS = 25 V, f = 1 MHz
Output Capacitance
at V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at V_DS = 25 V, f = 1 MHz
Symbol
Value
Unit
V_DSS
60
V
V_GSS
± 20
V
I_D
300
mA
I_DM
800
mA
P_tot
350
mW
T_J, T_s
- 55 to + 150
O_C
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_DS(ON)
g_fs
C_iss
C_oss
C_rss
Min.
60
-
-
1
-
-
80
-
-
-
Max.
-
1
± 10
2.5
2
3
-
50
25
5
Unit
V
µA
µA
V
Ω
mS
pF
pF
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 04/04/2008