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MMBT591A Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
MMBT591A
PNP Silicon Epitaxial Planar Transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Pulse Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 100 mA
at -VCE = 5 V, -IC = 500 mA
at -VCE = 5 V, -IC = 1 A
Collector Cutoff Current
at -VCB = 30 V
Collector Cutoff Current
at -VCE = 30 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 1 mA
at -IC = 500 mA, -IB = 20 mA
at -IC = 1 A, -IB = 100 mA
Base Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
Base Emitter Voltage
at -IC = 1 A, -VCE = 5 V
Collector Capacitance
at -VCB = 10 V, f = 1 MHz
Gain Bandwidth Product
at -VCE = 10 V, -IC = 50 mA, f = 100 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
-VCBO
-VCEO
-VEBO
-IC
-ICM
Ptot
TJ
TS
40
40
5
1
2
200
150
- 65 to + 150
V
V
V
A
A
mW
OC
OC
Symbol
hFE
hFE
hFE
hFE
-ICBO
-ICEO
-IEBO
-VCEsat
-VBEsat
-VBE
CC
fT
Min.
300
300
250
160
-
-
-
-
-
-
-
-
-
150
Max.
-
800
-
-
0.1
0.1
0.1
0.2
0.35
0.5
1.1
1
12
-
Unit
-
-
-
-
µA
µA
µA
V
V
V
pF
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/09/2006