MMBT5551 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT5551
NPN Silicon Epitaxial Planar Transistors
for high voltage amplifier applications.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_amb=25 ^OC
Parameter
DC Current Gain
at V_CE=5V, I_C=1mA
at V_CE=5V, I_C=10mA
at V_CE=5V, I_C=50mA
Collector Emitter Breakdown Voltage
at I_C=1mA
Collector Base Breakdown Voltage
at I_C=100µA
Emitter Base Breakdown Voltage
at I_E=10µA
Collector Cutoff Current
at V_CB=120V
Emitter Cutoff Current
at V_EB=4V
Collector Saturation Voltage
at I_C=10mA, I_B=1mA
at I_C=50mA, I_B=5mA
Base Saturation Voltage
at I_C=10mA, I_B=1mA
at I_C=50mA, I_B=5mA
Gain Bandwidth Product
at V_CE=10V, I_C=10mA, f=100MHz
Collector Base Capacitance
at V_CB=10V, f=1MHz
Noise Figure
at V_CE=5V, I_C=200µA, R_G=2KΩ, f=30Hz…15KHz
Thermal Resistance Junction to Ambient
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_tot
T_j
T_S
SOT-23 Plastic Package
Value
Unit
160
V
180
V
6
V
600
mA
200
mW
150
O_C
-55 to +150
O_C
Symbol
h_FE
h_FE
h_FE
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
V_{CE sat}
V_{CE sat}
V_{BE sat}
V_{BE sat}
f_T
C_CBO
NF
R_thA
Min.
80
80
30
160
180
6
-
-
-
-
-
-
100
-
-
-
Max.
-
250
-
-
-
-
50
50
0.15
0.2
1
1
300
6
8
200
Unit
-
-
-
V
V
V
nA
nA
V
V
V
V
MHz
pF
dB
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/11/2005