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| MMBT5087 Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP (LOW NOISE TRANSISTOR) | |||
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MMBT5087
PNP Silicon Epitaxial Planar Transistor
for general purpose application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 100 µA
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 10 mA
Collector Cutoff Current
at -VCB = 35 V
Emitter Cutoff Current
at -VEB = 3 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 1 mA
Transition Frequency
at -VCE = 5 V, IE = 0.5 mA, f = 100 MHz
Collector Base Capacitance
at -VCE = 5 V, IE = 0 , f = 100 KHz
SOT-23 Plastic Package
Symbol
Value
Unit
-VCBO
50
V
-VCEO
50
V
-VEBO
3
V
-IC
100
mA
-ICM
200
mA
Ptot
200
mW
Tj
150
OC
TS
- 55 to + 150
OC
Symbol
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(on)
fT
Ccb
Min.
250
250
250
-
-
50
50
3
-
-
40
-
Max.
800
-
-
50
50
-
-
-
0.3
0.85
-
4
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
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