MMBT491A Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBT491A
NPN Silicon Epitaxial Planar Transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Pulse Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 5 V, I_C = 1 mA
at V_CE = 5 V, I_C = 500 mA
at V_CE = 5 V, I_C = 1 A
Collector Base Cutoff Current
at V_CB = 30 V
Collector Emitter Cutoff Current
at V_CE = 30 V
Emitter Base Cutoff Current
at V_EB = 4 V
Collector Emitter Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
at I_C = 1 A, I_B = 100 mA
Base Emitter Saturation Voltage
at I_C = 1 A, I_B = 100 mA
Base Emitter Voltage
at I_C = 1 A, V_CE = 5 V
Collector Output Capacitance
at V_CB = 10 V, f = 1 MHz
Gain Bandwidth Product
at V_CE = 10 V, I_C = 50 mA, f = 100 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_J
T_S
40
40
5
1
2
200
150
- 55 to + 150
V
V
V
A
A
mW
O_C
O_C
Symbol
h_FE
h_FE
h_FE
I_CBO
I_CES
I_EBO
V_CEsat
V_BEsat
V_BE
C_ob
f_T
Min.
300
300
200
-
-
-
-
-
-
-
-
150
Max.
-
900
-
100
100
100
0.3
0.5
1.2
1.1
10
-
Unit
-
-
-
nA
nA
nA
V
V
V
pF
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/09/2008