MMBT4401W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon General Purpose Transistor

MMBT4401W
NPN Silicon General Purpose Transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 1 V, I_C = 0.1 mA
at V_CE = 1 V, I_C = 1 mA
at V_CE = 1 V, I_C = 10 mA
at V_CE = 1 V, I_C = 150 mA
at V_CE = 2 V, I_C = 500 mA
Collector Cutoff Current
at V_CB = 35 V
Base Cutoff Current
at V_EB = 5 V
Collector Base Breakdown Voltage
at I_C = 0.1 mA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 0.1 mA
Collector Emitter Saturation Voltage
at I_C = 150 mA, I_B = 15 mA
at I_C = 500 mA, I_B = 50 mA
Base Emitter Saturation Voltage
at I_C = 150 mA, I_B = 15 mA
at I_C = 500 mA, I_B = 50 mA
Current Gain Bandwidth Product
at V_CE = 10 V, I_C = 20 mA, f = 100 MHz
Collector Base Capacitance
at V_CB = 5 V, I_E = 0, f = 1 MHz
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_J
T_s
60
40
6
600
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Symbol
h_FE
h_FE
h_FE
h_FE
h_FE
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_CEsat
V_BEsat
f_T
C_cb
Min.
20
40
80
100
40
-
-
60
40
5
-
-
-
-
250
-
Max.
-
-
-
300
-
0.1
0.1
-
-
-
0.4
0.75
0.95
1.2
-
8
Unit
-
-
-
-
-
µA
µA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/12/2006