MMBD6050 Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – SWITCHING DIODE

MMBD6050
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
3
12
Marking Code: 5D
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Forward Current
Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_R
70
V
I_F
200
mA
I_FSM
500
mA
P_d
300
mW
T_j
150
O_C
T_s
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 100 mA
Reverse Current
at V_R = 50 V
Reverse ^{Breakdown Voltage}
at I_R = 100 µA
Diode Capacitance
at V_R = 0, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, I_R(REC) = 1 mA
Symbol
Min.
Max.
Unit
V_F
0.55
0.7
V
0.85
1.1
I_R
-
100
nA
V_(BR)R
70
-
V
C_T
-
2.5
pF
t_rr
-
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008