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| MMBD202CC Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SWITCHING DIODE | |||
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MMBD202CC
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Application
⢠Ultra high speed switching
3
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Surge Current (t = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 70 V
Total Capacitance
at VR = 6 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 5 mA, RL = 50 â¦
12
Marking Code: A4
SOT-23 Plastic Package
Symbol
Value
Unit
VRM
80
V
VR
80
V
IO
100
mA
IFM
300
mA
IFSM
4
A
Ptot
200
mW
Tj
150
OC
Ts
- 55 to + 150
OC
Symbol
Max.
Unit
VF
1.2
V
IR
0.1
µA
CT
3.5
pF
trr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
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