MMBD193 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

MMBD193
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 80 V
Total Capacitance
at V_R = 0 , f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA
3
12
Marking Code: 5D
SOT-23 Plastic Package
Symbol
Value
Unit
V_RM
85
V
V_R
80
V
I_O
100
mA
I_FM
300
mA
I_FSM
2
A
P_tot
150
mW
T_j
150
O_C
T_s
- 55 to + 150
O_C
Symbol
Max.
Unit
V_F
1.2
V
I_R
0.5
µA
C_T
3
pF
t_rr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008