MMBD142W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SWITCHING DIODE

MMBD142W
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Applications
• for switching circuits
3
12
Marking Code: D3
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Forward Current
Peak Forward Current
Non-repetitive Peak Forward Surge Current (t = 1 s)
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RM
80
V
V_R
80
V
I_F
100
mA
I_FM
225
mA
I_FSM
500
mA
T_J
150
O_C
T_s
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 75 V
Reverse Voltage
at I_R = 100 µA
Terminal Capacitance
at V_R = 0, f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA, V_R = 6 V, I_rr = 0.1 • I_R, R_L = 100 Ω
Symbol
Min.
Max.
Unit
V_F
-
1.2
V
I_R
-
0.1
µA
V_R
80
-
V
C_t
-
15
pF
t_rr
-
10
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/10/2007