MA721WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

MA721WS
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Applications
• Super-high speed switching circuit
• Small current rectification
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
DO
Top View
Marking Code: "DO"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
V_R
30
V
Peak Forward Current
I_FM
300
mA
Average Forward Current
Non-repetitive Peak Forward Surge Current ¹⁾
I_F(AV)
200
mA
I_FSM
1
A
Junction Temperature
T_J
150
O_C
Storage Temperature Range
T_s
- 55 to + 150
O_C
1) _{The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)}
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 200 mA
Reverse Current
at V_R = 30 V
Terminal Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 100 mA, I_rr = 10 mA, R_{L =} 100 Ω
Symbol
Typ.
Max.
Unit
V_F
-
0.55
V
I_R
-
50
µA
C_T
30
-
pF
t_rr
3
-
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006