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| MA3ZD12W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | |||
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MA3ZD12W
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
⢠Low forward voltage
⢠Allowing high density mounting
3
12
Marking Code: YR
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Forward Surge Current (t = 8.3 ms)
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VRRM
25
V
VR
20
V
IF(AV)
700
mA
IFSM
2
A
TJ
125
OC
Ts
- 55 to + 125
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 700 mA
Reverse Current
at VR = 20 V
Reverse Breakdown Voltage
at IR = 600 µA
Junction Capacitance
at VR = 0, f = 1 MHz
Symbol
Min.
Max.
Unit
VF
-
0.45
V
IR
-
200
µA
V(BR)R
25
-
V
CJ
-
100
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/05/2008
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