LS4448 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 500mW Hermetically Sealed Glass Fast Switching Diodes

LS4448
SILICON EPITAXIAL PLANAR DIODE
fast switching diode in QuadroMELF case especially
suited for automatic surface mounting.
Identical electrically to standard JEDEC 1N4448.
LS-34
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
QuadroMELF
Dimensions in mm
Symbol
Value
Unit
Peak Reverse Voltage
Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load (f ≥ 50 Hz)
V_RM
100
V
V_R
75
V
I_O
150 ¹⁾
mA
Surge Forward Current at t < 1 s and T_j = 25 ^OC
Power Dissipation
I_FSM
500
mA
P_tot
500 ¹⁾
mW
Junction Temperature
T_j
175
O_C
Storage Temperature Range
T_S
- 65 to + 175
O_C
1) _{Valid provided that electrodes are kept at ambient temperature.}
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Forward Voltage
at I_F = 5 mA
V_F
at I_F = 100 mA
Leakage Current
at V_R = 20 V
at V_R = 75 V
Reverse Breakdown Voltage
tested with 100 µA Pulses
Capacitance
at V_F = V_R = 0
Reverse Recovery Time
from I_F = 10 mA to I_R = 1 mA, V_R = 6 V, R_L = 100 Ω
Thermal Resistance Junction to Ambient Air
I_R
V_(BR)R
C_tot
t_rr
R_thA
Rectification Efficiency
at f = 100 MHz, V_RF = 2 V
η_v
1) _{Valid provided that electrodes are kept at ambient temperature.}
Min.
0.62
-
-
-
100
-
-
-
0.45
Max.
0.72
1
25
5
-
4
4
0.35 ¹⁾
-
Unit
V
nA
µA
V
pF
ns
K/mW
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/01/2007