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| LS133 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE | |||
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LS133
SILICON EPITAXIAL PLANAR DIODE
High speed switching diode
Features
⢠Glass sealed envelope
⢠High speed
⢠High reliability
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Current
Surge Current (1s)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 80 V
Capacitance Between Terminals
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 50 â¦
LS-34
QuadroMELF
Dimensions in mm
Symbol
Value
Unit
VRM
90
V
VR
80
V
Io
130
mA
IFM
400
mA
Isurge
600
mA
Ptot
300
mW
Tj
175
OC
Ts
- 65 to + 175
OC
Symbol
Max.
Unit
VF
1.2
V
IR
0.5
µA
CT
2
pF
trr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :12/01/2007
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