LLDB3 Datasheet, PDF (1/1 Pages) Formosa MS – DIAC

LLDB3, LLDB4
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead,
hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakover current
at breakover voltage as they withstand peak pulse current.
The breakover symmetry is within four volts with a typical
breakover voltage of LLDB3 32 V, LLDB4 40 V. These diacs
are intended for use in thyristor phase control, circuits for
lamp-dimming, universal-motor speed controls, and heat
controls.
Storage Temperature Range T_S - 40 ^OC to +150 ^OC
Operating Temperature Range T_J - 40 ^OC to +100 ^OC
MAXIMUM RATINGS at 50 ^OC Ambient
Peak Current (10 µs duration, 120 cycle repetition rate)
Peak output voltage e_P 3 ± Volts Max.¹⁾
I_P ± 2 A Max.
Dimensions in mm
Characteristics at T_a = 25 ^OC
Parameter
Breakover Voltage
Breakover Currents
LLDB3
LLDB4
Breakover Voltage Symmetry
Dynamic Breakover Voltage
ΔI = [I_BR to I_F = 10 mA]
Thermal Impedance Junction to Ambient Air
Symbol
V_(BR)1 and V_(BR)2
I_(BR)1 and I_(BR)2
[V_(BR)1]-[V_(BR)2]
| ΔV ± |
R_θJA
Min.
28
35
-
-
5
-
Max.
36
45
200
3.8
-
60
Unit
V
µA
V
V
O_C/W
DIAC
60~
120 V
0.1 uF
20
ep
1)_{CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST}
load up to 1500 W
3.3 K
120 VAC
60 Hz
200 K
TRIAC
0.1 uF
100 V
BILATERAL
TRIGGER
DIAC
TYPICAL DIAC-TRIAC FULL-WAVE PHASE
CONTROL CIRCUIT
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/01/2008