LL700 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES

LL700, LL700A
SILICON EPITAXIAL PLANAR TYPE
SCHOTTKY BARRIER DIODES
for Ordinary Wave Detection
for Super High Speed Switching
Features
• Low forward rise voltage (V_F) and satisfactory wave
• detection efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current I_R
Absolute Maximum Ratings (T_a = 25^oC)
Parameter
Symbol
Rating
Unit
Reverse Voltage (DC)
LL700
15
V_R
V
LL700A
30
Peak Reverse Voltage
LL700
15
V_RM
V
LL700A
30
Forward Current (DC)
I_F
30
mA
Peak Forward Current
Junction Temperature
Storage Temperature Range
I_FM
150
mA
T_j
125
O_C
T_S
-55 to +125
O_C
Characteristics at T_a = 25^oC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward Voltage (DC)
Reverse
Current (DC)
LL700
LL700A
V_F1
I_F = 1mA
V_F2
I_F = 30mA
I_R
V_R = 15V
V_R = 30V
-
-
0.4
-
-
1
V
-
-
100
nA
-
-
150
Terminal Capacitance
C_t
V_R = 1V, f = 1MHz
-
1.3
-
pF
Reverse Recovery Time*
t_rr
I_F = I_R = 10mA
I_rr = 1mA, R_L = 100Ω
-
1
-
ns
Detection Efficiency
η
V_in = 3V_(peak), f = 30MHz
-
60
-
%
R_L = 3.9kΩ, C_L = 10pF
Note: (1) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
Note: (1) the charge of a human body and the leakage of current from the operating equipment.
Note: (2) Rated input / output frequency: 2,000MHz.
Note: (3) *: t_rr measuring instrument
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/02/2003