LL352 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

LL352
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
Extreme fast switches
Absolute Maximum Ratings (T_j = 25^OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Maximum Peak Forward Current
Surge Current (10ms)
Average Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RM
85
V
V_R
80
V
I_FM
200
mA
I_FSM
1
A
Io
100
mA
P_tot
200
mW
T_j
125
O_C
T_s
-55 … +125
O_C
Characteristics at T_j = 25 ^OC
Parameter
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Test Conditions
I_F = 1mA
I_F = 10mA
I_F = 100mA
V_R = 30V
V_R = 80V
V_R = 0, f = 1MH_Z
I_F = 10mA
Symbol
Min
Typ
Max
Unit
V_F
-
0.62
-
V
V_F
-
0.75
-
V
V_F
-
0.98
1.2
V
I_R
-
-
0.1
μA
I_R
-
-
0.5
μA
C_T
-
0.5
3
pF
t_rr
-
1.6
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/02/2003