LL106 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – SILICON SCHOTTKY BARRIER DIODE

LL106
SILICON SCHOTTKY BARRIER DIODE
FOR VARIOUS DETECTOR
High Speed Switching
Features
• Detection efficiency is very good
• Small temperature coefficient
• High reliability with glass seal
LL-34
Absolute Maximum Ratings (T_a = 25^oC)
Reverse Voltage
Average Rectified Current
Junction Temperature
Storage Temperature
Symbol
Value
Unit
V_R
10
V
I_o
30
mA
T_j
125
O_C
T_Stg
-55 to +125
O_C
Characteristics at T_amb = 25^oC
Forward Current
at V_F = 1V
Reverse current
at V_R = 6V
Capacitance
at V_R = 1V, f = 1MHz
Rectifier efficiency
at Vin = 2Vrms, f = 40MHz,
R_L = 5KΩ, C_L = 20pF
ESD-Capability^*1
at C = 200pF,Both forward and
reverse direction 1 pulse
Symbol
Min.
Typ.
Max.
Unit
I_F
4.5
-
-
mA
I_R
-
-
70
μA
C
-
-
1.5
pF
η
70
-
-
%
-
100
-
-
V
Note: 1. Failure criterion; I_R/140μA at V_R = 6V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/03/2003