LL103A Datasheet, PDF (1/4 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

LL103A...LL103C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The LL103A, B, C is a metal on Silicon Schottky barrier
device which is protected by a PN junction guard ring. The
low forward voltage drop and fast switching make it ideal for
protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
Other uses are for click suppression, efficient full wave
bridges in telephone subsets, and as blocking diodes in
rechargeable low voltage battery systems.
This diode is also available in DO-35 case with type
designation SD103A, B, C.
Absolute Maximum Ratings (T_a = 25^oC)
Symbol
Value
Unit
Peak Reverse Voltage
Power Dissipation (Infinite Heatsink)
Tc = 3/8 from body
Derates at 4 mW/^oC to 0 at 125 ^oC
LL103A
V_RRM
40
V
LL103B
V_RRM
30
V
LL103C
V_RRM
20
V
P_tot
400¹⁾
mW
Single Cycle Surge 60Hz sinewave
Junction Temperature
Storage Temperature Range
I_FSM
15
A
T_j
125
O_C
T_S
-55 to +175
O_C
1) _{Valid provided that electrodes are kept at ambient temperature.}
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002